CSD86350Q5DT
Home
Category
FET, MOSFET
CSD86350Q5DT
The pictures are for reference only
like

CSD86350Q5DT

Brand:TI
Model:CSD86350Q5DT
stock:10141
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥4.17
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-PowerLDFN
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 13W(Ta)
FET Type 2 N channels(half-bridge)
Drain source voltage (Vdss) 25V
Current at 25 ° C - continuous drain (Id) 40A(Ta)
On resistance (maximum) for different Ids and Vgs 5 mΩ @ 25A,5V,1.1 mΩ @ 25A,5V
Vgs (th) (maximum) for different Ids 2.1V @ 250µA,1.6V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 10.7nC @ 4.5V,25nC @ 4.5V
Input capacitance at different Vds (Ciss) (maximum) 1870pF @ 12.5V,4000pF @ 12.5V
FET function standard
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer